1 CAS100H12AM1 1200v, 100a silicon carbide half-bridge module z-fet tm mosfet and z-rec tm diode d a t a s h e e t : c a s 1 0 0 h 1 2 a m 1 , r e v . - features ? ultra low loss ? high ruggedness ? high-frequency operation ? zero reverse recovery current from diode ? zero turn-off tail current from mosfet ? positive temperature coeffcient on v f and v ds (on) system benefts ? enables compact and lightweight systems ? high effciency operation ? mitigate over-voltage protection ? ease of transistor gate control ? reduces thermal requirements applications ? high power converters ? motor drives ? solar inverters ? ups and smps ? induction heating package maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions notes v ds drain - source voltage 1200 v v gs gate - source voltage -5/+20 v i d continuous drain current 165 a v gs = 20v, t c =25?c 105 v gs = 20v, t c =100?c i d(pulse) pulsed drain current 400 a pulse width t p = 1ms limited by t jmax ,t c = 25?c t j junction temperature 150 ?c t c ,t stg case and storage temperature range -55 to +125 ?c v isol case isolation voltage 6000 v ac, t=1min l stray stray inductance <15 nh measured along maximum path from pad to lug m mounting torque 2.94 nm g weight 200 g clearance distance 12.2 mm terminal to terminal creepage distance 17.3 mm terminal to terminal 20.2 mm terminal to base plate part number package marking CAS100H12AM1 half-bridge module CAS100H12AM1 v ds 1200 v i d (t c = 100?c) 100 a r ds(on) 16 m? subject to change without notice. www.cree.com
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain - source breakdown voltage 1200 v v gs, = 0v, i d = 100ua v gs(th) gate threshold voltage 2.0 2.5 v v ds = v gs, i d = 5ma fig 6 2.6 3.1 v ds = v gs, i d = 50ma 1.8 v ds = v gs, i d = 5ma, t j = 150oc 2.4 v ds = v gs, i d = 50ma, t j = 150oc i dss zero gate voltage drain current 5 500 a v ds = 1200v, v gs = 0v 50 1250 v ds = 1200v, v gs = 0v, t j = 150oc i gss gate-source leakage current 0.25 a v gs, = 20v, v ds = 0v r ds(on) on state resistance 16 20 m? v gs = 20v, i d = 20a fig 4 20 24 v gs = 20v, i d = 20a , t j = 150oc g fs transconductance 31 s v ds = 20v , i d = 100a fig 5 32 v ds = 20v , i d = 100a, t j = 150oc c iss input capacitance 9500 pf v ds = 800v, v gs = 0v f = 1mhz, v ac = 25mv c oss output capacitance 600 c rss reverse transfer capacitance 65 e on turn-on switching energy (25oc) ( 125oc) 2.4 2.0 mj v dd = 600v, v gs = -5v/+20v i d = 100a, r g = 5 inductive load fig 10 e off turn-off switching energy (25oc) ( 125oc) 1.3 1.4 mj r g internal gate resistance 1.25 ? f = 1mhz, v ac = 25mv q g gate charge 490 nc v dd = 600v, i d = 100a free-wheeling sic schottky diode characteristics v sd diode forward voltage 1.8 2.2 v i f = 100a fig 9 2.5 i f = 100a, t j = 150oc q c total capacitive charge 1.6 c i f = 100a, v r = 600v di f/ dt = 2200a/s, t j = 25oc t rr reverse recovery time 47 ns e rr reverse recovery energy 0.5 mj c total capacitance 5000 pf v r =0v, f = 1mhz 400 v r =200v, f = 1mhz 300 v r =400v, f = 1mhz thermal characteristics symbol parameter min. typ. max. unit test conditions note r thjcm thermal resistance juction-to-case for mosfet 0.16 0.19 k /w r thjcd thermal resistance juction-to-case for diode 0.35 0.37 module application note: the sic mosfet module switches at speeds beyond what is customarily associated with igbt based modules. therefore, special precautions are required to realize the best performance. the interconnection between the gate driver and module housing needs to be as short as possible. this will afford the best switching time and avoid the potential for device oscillation. also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive v ds overshoots. CAS100H12AM1, rev. -
3 typical performance 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current i d (a) drain - source voltage v ds (v) v gs = 10 v v gs = 5 v, 0 v 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current i d (a) drain - source voltage v ds (v) v gs = 5 v v gs = 0 v figure 2. typical output characteristics t j = 150oc figure 1. typical output characteristics t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 25 50 75 100 125 150 normalized r ds(on) temperature t j ( o c) v gs = 20 v 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current i d (a) drain - source voltage v ds (v) v gs = 5 v, 0 v figure 4. normalized on-resistance vs. temperature figure 3. typical output characteristics t j = - 55oc 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 drain current i d (a) gate - source voltage v gs (v) v ds = 20 v 0 0.5 1 1.5 2 2.5 3 3.5 4 - 75 - 50 - 25 0 25 50 75 100 125 150 threshold voltage v gs(th) (v) temperature t j ( o c) i d = 5 ma i d = 50 ma fig 6. typical threshold voltage vs. temperature figure 5. typical transfer characteristics CAS100H12AM1, rev. -
4 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 diode current i sd (a) diode forward voltage v sd (v) typical performance 0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 p d (w) temperature t j ( o c) 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 i d (a) temperature t j ( o c) figure 8. continuous current derating curve 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 switching loss e on and e off (mj) temperature t j ( o c) e off e on figure 7. power dissipation derating curve figure 10. inductive switching energy vs. temperature figure 9. typical diode turn-on CAS100H12AM1, rev. -
5 package dimensions (mm) CAS100H12AM1, rev. -
6 package dimensions (mm) CAS100H12AM1, rev. -
7 7 circuit diagram m 1 d 1 22 v 6 . 8 v r g ( int ) m 2 d 2 22 v 6 . 8 v r g ( int ) g 1 rtn g 1 g 2 rtn g 2 d 1 s 1 / d 2 s 2 CAS100H12AM1, rev. - this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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